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VISHAY
SFH628A / SFH6286
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input, Low Input Current
Features
High Common-mode Interference Immunity Isolation Test Voltage, 5300 VRMS Low Coupling Capacitance Good CTR Linearity Depending on Forward Current * Low CTR Degradation * High Collector-emitter Voltage, VCEO = 55 V * * * *
1 A/C 1 C/A 2
i179080
4C 3E
1
Agency Approvals
* UL - File No. E52744 System Code J * DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1
Creepage and clearance distances of > 8.0 mm are achieved with option 6. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation to an operation voltage of 400 VRMS or DC.
Applications
Telecom Industrial Controls Battery Powered Equipment Office Machines
Order Information
Part SFH628A-2 SFH628A-3 SFH628A-4 Remarks CTR 63 - 200 %, DIP-4 CTR 100 - 320 %, DIP-4 CTR 160 - 500 %, DIP-4 CTR 63 - 200 %, SMD-4 CTR 100 - 320 %, SMD-4 CTR 160 - 500 %, SMD-4 CTR 63 - 200 %, DIP-4 400 mil (option 6) CTR 100 - 320 %, DIP-4 400 mil (option 6) CTR 100 - 320 %, SMD-4 (option 7) CTR 160 - 500 %, DIP-4 400 mil (option 6)
Description
The SFH628A (DIP) and SFH6286 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm lead spacing.
SFH6286-2 SFH6286-3 SFH6286-4 SFH628A-2-X006 SFH628A-3-X006 SFH628A-3-X007 SFH628A-4-X006
For additional information on the available options refer to Option Information.
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the devise. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter DC Forward current Surge forward current t 10 s Test condition Symbol IF IFSM Value 50 2.5 Unit mA A
Document Number 83722 Rev. 1.4, 26-Apr-04
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SFH628A / SFH6286
Vishay Semiconductors
VISHAY
Output
Parameter Collector-emitter voltage Emitter-collector voltage Collector current tp 1.0 ms Power dissipation Test condition Symbol VCE VEC IC IC Pdiss Value 55 7.0 50 100 150 Unit V V mA mA mW
Coupler
Parameter Isolation test voltage between emitter and detector, refer to Climate DIN 40046, part2, Nov.74 Creepage distance Clearance Insulation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDEO 303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature range Ambient temperature range Junction temperature Soldering temperature max. 10 s. Dip Soldering distance to seating plane 1.5 mm RIO RIO Tstg Tamb Tj Tsld Test condition Symbol VISO Value 5300 Unit VRMS
7.0 7.0 0.4 175 1012 1011 - 55 to +150 - 55 to +100 100 260
mm mm mm
C C C C
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Capacitance Thermal resistance Test condition IF = 5.0 mA VR = 0 V, f = 1.0 MHz Symbol VF CO Rthja Min Typ. 1.1 45 1070 Max 1.5 Unit V pF K/W
Output
Parameter Collector-emitter leakage current Collector-emitter capacitance Thermal resistance Test condition VCE = 10 V VCE = 5.0 V, f = 1.0 MHz Symbol ICEO CCE Rthja Min Typ. 10 7 500 Max 200 Unit nA pF K/W
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Document Number 83722 Rev. 1.4, 26-Apr-04
VISHAY
Coupler
Parameter Collector-emitter saturation voltage Test condition IF = 1.0 mA, IC = 0.5 mA IF = 1.0 mA, IC = 0.8 mA IF = 1.0 mA, IC = 1.25 mA Part SFH628A-2 SFH6286-2 SFH628A-3 SFH6286-3 SFH628A-4 SFH6286-4
SFH628A / SFH6286
Vishay Semiconductors
Symbol VCEsat VCEsat VCEsat
Min
Typ. 0.25 0.25 0.25
Max 0.4 0.4 0.4
Unit V V V
Current Transfer Ratio
Parameter IC/IF Test condition IF = 1.0 mA, VCE = 0.5 V IF = 0.5 mA, VCE = 1.5 V IF = 1.0 mA, VCE = 0.5 V IF = 0.5 mA, VCE = 1.5 V IF = 1.0 mA, VCE = 0.5 V IF = 0.5 mA, VCE = 1.5 V Part SFH628A-2 SFH6286-2 SFH628A-2 SFH6286-2 SFH628A-3 SFH6286-3 SFH628A-3 SFH6286-3 SFH628A-4 SFH6286-4 SFH628A-4 SFH6286-4 Symbol CTR CTR CTR CTR CTR CTR Min 63 32 100 50 160 80 250 160 500 100 320 Typ. Max 200 Unit % % % % % %
Switching Characteristics
Parameter Turn-on time Rise time Turn-off time Fall time Test condition VCC = 5.0 V, IC = 2.0 mA, RL = 100 VCC = 5.0 V, IC = 2.0 mA, RL = 100 VCC = 5.0 V, IC = 2.0 mA, RL = 100 VCC = 5.0 V, IC = 2.0 mA, RL = 100 Symbol ton tr toff tf Min Typ. Max 6.0 3.5 5.5 5.0 Unit s s s s
IF
RL
VCC IC 10% 90%
Input Pulse
Output Pulse tr tf t off
47
isfh618a_11
ton
isfh618a_12
Fig. 1 Test Circuit
Fig. 2 Test Circuit and Waveforms
Document Number 83722 Rev. 1.4, 26-Apr-04
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SFH628A / SFH6286
Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified)
VCE = 0.5 V, CTR = f (TA)
VISHAY
IF = 1.0 mA, VF = f (TA)
isfh618a_01
isfh618a_04
Fig. 3 Current Transfer Ratio (typ.)
Fig. 6 Diode Forward Voltage (typ.)
VCE = 0.5 V, CTR = f (TA)
TA = 25C, f = 1.0 MHz, CEE = f (VCE)
isfh618a_01 isfh618a_02 isfh618a_05
Fig. 4 Current Transfer Ratio (typ.)
Fig. 7 Transistor Capacitance
TA = 25C, VF = f (IF)
TA = 25C, CE = f (VCE, IF)
isfh618a_03
isfh618a_06
Fig. 5 Diode Forward Voltage (typ.)
Fig. 8 Output Characteristics
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Document Number 83722 Rev. 1.4, 26-Apr-04
VISHAY
SFH628A / SFH6286
Vishay Semiconductors
IF = f (TA)
isfh618a_07
Fig. 9 Permissible Forward Current Diode
Ptot = f (TA)
isfh618a_08
Fig. 10 Permissible Power Dissipation
TA = 25C, IF = 1.0 mA, VCC = 5.0 V, tON, tR, tOFF, tF, = f (RL)
isfh618a_09
Fig. 11 Switching times (typ.)
Document Number 83722 Rev. 1.4, 26-Apr-04
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SFH628A / SFH6286
Vishay Semiconductors Package Dimensions in Inches (mm)
VISHAY
2
1 pin one ID
.255 (6.48) .268 (6.81)
ISO Method A
3
4
.179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .050 (1.27) typ. .130 (3.30) .150 (3.81) 4 typ. .018 (.46) .022 (.56) 10 .020 (.508 ) .035 (.89) .050 (1.27) .100 (2.54) 3-9 .300 (7.62) typ.
.230 (5.84) .250 (6.35) .110 (2.79) .130 (3.30)
i178027
.008 (.20) .012 (.30)
Package Dimensions in Inches (mm)
SMD
pin one ID .255 (6.48) .268 (6.81)
.030 (.76) .100 (2.54) R .010 (.25) .070 (1.78) .315 (8.00) min .435 (11.05) .060 (1.52)
3
4
.179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .130 (3.30) .150 (3.81)
ISO Method A
.375 (9.52) .305 (10.03) .296 (7.52) .312 (7.90) 10 .010 (.25) typ.
i178029
4 typ. 1.00 (2.54)typ. .050 (1.27) typ.
.0098 (.249) .035 (.102) Lead coplanarity .004 max.
.315 (8.00) min. .020 (.508) .040 (1.02)
3-7
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Document Number 83722 Rev. 1.4, 26-Apr-04
VISHAY
SFH628A / SFH6286
Vishay Semiconductors
Option 6
.407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN.
Option 7
.300 (7.62) TYP .
.180 (4.6) .160 (4.1) .315 (8.0) MIN.
18487
.014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92)
.331 (8.4) MIN. .406 (10.3) MAX.
Document Number 83722 Rev. 1.4, 26-Apr-04
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SFH628A / SFH6286
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 83722 Rev. 1.4, 26-Apr-04

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